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Sth180n10f3-6

WebView datasheets for STH180N10F3-6 Datasheet by STMicroelectronics and other related components here. STH180N10F3-6 Datasheet by STMicroelectronics Digi-Key … WebView datasheets for STH180N10F3-6 by STMicroelectronics and other related components here. STH180N10F3-6 Datasheet by STMicroelectronics ... by STMicroelectronics View All Related Products Download PDF Datasheet. I 'l megugmented Power MOSFET in H2PAK—6 package D (TAB) o G(1) TIT LM Auuuwsw November 2014. DocID022347 Re v 4 . 1/ 15. …

STH180N4F6-2 Electronic Distributor - Y-IC.com

WebSTH180N10F3-6 -- TRANSISTORS - FETS, MOSFETS - SINGLE STMicroelectronics, Inc. Transistors - FETs, MOSFETs - Single STH180N10F3-6. Digi-Key Electronics; Digi-Key … WebElectrical characteristics STH180N10F3-2 6/16 DocID019060 Rev 2 2.1 Electrical characteristics (curves) -1 Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized V (BR)DSS vs temperature Figure 7: Static drain-source on-resistance ID 100 10 1 0.1 1 10 VDS(V) metal wall shelving for laundry room https://hidefdetail.com

STH180N10F3-6 Stmicroelectronics, Power MOSFET, N Channel, …

WebSTH180N10F3-6 Electrical ratings Doc ID 022347 Rev 2 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package. Drain current (continuous) at TC = 25°C 180 A ID WebSTH180N10F3-6 datasheet PDF download, STMicroelectronics Transistors - FETs, MOSFETs - Single STH180N10F3-6 Specifications: MOSFET N-CH 100V 180A H2PAK. WebBuy STH180N10F3-6 - Stmicroelectronics - Power MOSFET, N Channel, 100 V, 180 A, 0.0039 ohm, H2PAK-6, Surface Mount. Farnell UK offers fast quotes, same day dispatch, fast … metal wall shelving brackets

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Sth180n10f3-6

STH180N10F3-6 - STMicroelectronics, Inc. - Transistors - FETs, …

WebDescriptions of STMicroelectronics STH180N10F3-2 provided by its distributors. N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package STMicroelectronics Trans MOSFET N-CH 100V 180A 3-Pin (2+Tab) H2PAK T/R Avnet 180 A 100 V 0.004 ohm N-CHANNEL Si POWER MOSFET Component Stockers USA WebSTH180N10F3-6 STMicroelectronics MOSFET N-CH 100V 180A H2PAK STH180N10F3-2 STMicroelectronics MOSFET N-CH 100V 120A H2PAK STH17808-2 ST ST H2PAK-2 STH185N10F3-2 STMicroelectronics MOSFET N-CH 100V 180A H2PAK-2 STH2007TBR ST ST BGA Hot Parts More STH140N8F7-2 STH143002.1 STH143004.1 STH145N8F7-2AG …

Sth180n10f3-6

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WebThis device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching … WebSTMicroelectronics N沟道增强型MOSFET管, STripFET F3系列, Vds=100 V, 180 A, H2PAK-6封装, 表面贴装 RS 库存编号 761-0519 制造商零件编号 STH180N10F3-6 制造商 STMicroelectronics 产品技术参数资料 N-channel 100 V, 3.9 mOhm, 180 A, H2PAK-6 STripFET (TM) III Power MOSFET 法例与合规 符合 符合声明 产品详细信息 N 通道 …

WebSTMicroelectronics STH180N10F3-6 17638 piezas en stock. Compre STH180N10F3-6 con el mejor precio en Distribuidor de componentes electrónicos. I-Components.com proporciona el precio competitivo y la garantía de un año. WebSTH180N10F3-6 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 100V ; Current - Continuous Drain (Id) @ 25° C: 120A ; Rds On (Max) @ Id, Vgs: 4.5 mOhm Features. Applications. Description. This device is an N-channel enhancement mode Power MOSFETs produced using …

WebSTMicroelectronics STH180N10F3-6 MOSFETs Trans MOSFET N-CH 100V 180A 7-Pin (6+Tab) H2PAK T/R Download Datasheet Symbols and Footprints See all MOSFETs by … WebSTH180N10F3-2 price and stock Part Details STH18... Datasheet My Preferred Distributors (0) Authorized (5) Independent (0) Industrial Supplies / MRO (0) Desired Stock: In Stock Only Exact Matches Only Currency Estimator: Default Filter by Manufacturer Select Manufacturer Top of Page ↑ Digi-Key ECIA (NEDA) Member • Authorized Distributor

WebThis device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Key Features Ultra low on-resistence 100% avalanche tested Technical Attributes Find Similar Parts ECCN / UNSPSC / COO

WebSTH180N10F3-6: Each: 0: 27 Weeks, 1 Days: 1: £1.69 £1.46 £1.46 £1.46 £1.46 Buy Now ... metal walls in garageWebSTMicroelectronics's STH180N10F3-6 is trans mosfet n-ch 100v 180a 7-pin(6+tab) h2pak t/r in the fet transistors, mosfets category. Check part details, parametric & specs updated … metal wall mount file organizerWebSTH180N10F3-6 – N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6 from STMicroelectronics. Pricing and Availability on millions of electronic components from … metal walls prefabWebDownload the STH180N10F3-6 datasheet from STMicroelectronics. N-channel 100 V, 3.9 mOhm, 180 A, H2PAK-6 STripFET(TM) III Power MOSFET STH180N10F3-6 … metal wall stud screwsWebJun 13, 2024 · rn5re29ba-tr xc6117b025mr max6757uttd0+t hvc358b hn9c16ft max6728kawed6-t nd487r1t-e3 bzt52c18-g max6718uksyd4-t nju7200l45 hvu355 mmdf2p02e sgm2032-1.3yc5g/tr ad7947bcp xc6371d220pr opa376aidbvr lm2903hypt tsl1020if ntljd3182fztag max6727kashd3+t ref02j/883 xc6115d640mr hbc124es6r … metal walls rustWebSTH180N10F3-6 MOSFET. Datasheet pdf. Equivalent Type Designator: STH180N10F3-6 Marking Code: 180N10F3 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 315 W Maximum Drain-Source Voltage Vds : 100 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : 4 V metal wall panel typesWeb概要 This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing … metal wall storage bins